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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

Auteurs : RBID : Pascal:03-0359657

Descripteurs français

Pascal (Inist)
- 6855J, 6855L, 6172L, 6172M, 6837H, 6172F, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Couche épitaxique semiconductrice, Revêtement MOCVD, Diffraction RX, Microscopie électronique balayage, Microscopie électronique transmission, Densité dislocation, Joint grain.

English descriptors

KwdEn :
- Dislocation density, Experimental study, Gallium arsenides, Grain boundaries, III-V semiconductors, Indium compounds, MOCVD coatings, Scanning electron microscopy, Semiconductor epitaxial layers, Transmission electron microscopy, XRD.

Abstract

Substantial defect reduction was achieved in InAs/GaAs by lateral epitaxial overgrowth in which InAs was grown on mask-patterned (100) GaAs with stripe-shaped windows of various widths by metalorganic chemical vapor deposition. The InAs growth morphology, crystal quality, and microstructure were evaluated using double-crystal x-ray rocking curves and scanning and transmission electron microscopy. The microstructure of the InAs grown on mask-free control samples was comprised of micron-scale misoriented grains and dislocations at a density of 10¹¹ cm^-2. As the width of the mask openings decreased to 0.8 μm, the rocking curves narrowed, grain boundaries disappeared and the dislocation density decreased to <10⁷ cm^-2. The distribution of the remaining defects suggests substantial changes in microstructural development when the window width is 1 μm. © 2003 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Kuech, Thomas F" uniqKey="Kuech T">Thomas F. Kuech</name>
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<front><div type="abstract" xml:lang="en">Substantial defect reduction was achieved in InAs/GaAs by lateral epitaxial overgrowth in which InAs was grown on mask-patterned (100) GaAs with stripe-shaped windows of various widths by metalorganic chemical vapor deposition. The InAs growth morphology, crystal quality, and microstructure were evaluated using double-crystal x-ray rocking curves and scanning and transmission electron microscopy. The microstructure of the InAs grown on mask-free control samples was comprised of micron-scale misoriented grains and dislocations at a density of 10<sup>11</sup>
 cm<sup>-2</sup>
. As the width of the mask openings decreased to 0.8 μm, the rocking curves narrowed, grain boundaries disappeared and the dislocation density decreased to <10<sup>7</sup>
 cm<sup>-2</sup>
. The distribution of the remaining defects suggests substantial changes in microstructural development when the window width is 1 μm. © 2003 American Institute of Physics.</div>
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 cm<sup>-2</sup>
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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

Descripteurs français

English descriptors

Abstract

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